ZG4N60N,,,,,.,,.ZG4N60 is an N-channel enhancement mode
MOSFET, which is produced usingZhongxinMicro-electronics's
proprietary. The self-aligned planar process and improved terminal
technology reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor can be
used in various power switching circuit for higher efficiency and
system miniaturization. MAIN CHARACTERISTICS
VDSS600V ID4.0ARDS(ON)2.0ΩCrss8pF ABSOLUTE
MAXIMUM RATINGS
(Tc=25ºC)
ParameterSymbolValueUnit-Drain-Source VoltageVDSS600VContinues
Drain CurrentIDTc=25ºC4*ATc=100ºC2.5*( 1)Plused Drain Current (note
1)IDM16AGate-to-Source VoltageVGS±30V( 2)Single Pulsed
Avalanche Energy (note 2)EAS218mJ( 1)Avalanche Current (note
1)IAR4.0A( 1)Repetitive Avalanche Energy (note 1)EAR10mJ( 3)Peak
Diode Recovery (note 3)dv/dt4.5V/nsPower
DissipationPDTc=25ºCTO-251/TO-25251WTO-220/TO-262100TO-220F33Power
Dissipation Derating FactorPD(DF)Above
25ºCTO-251/TO-2520.39W/ºCTO-220/TO-2620.8TO-220F0.26 Operating
and Storage Temperature RangeTJ,TSTG150,-55~+150ºCMaximum
Temperature for SolderingTL300ºC THERMAL
CHARACTERIASTIC
ParameterSymbolMaxUnitThermal Resistance,Junction to
CaseRth(j-c)TO-251/TO-2522.5WTO-220/TO-2621.25TO-220F3.79Thermal
Resistance,Junction to
AmbientRth(j-A)TO-251/TO-25283W/ºCTO-220/TO-26262.5TO-220F62.5* *
Drain current limited by maximum junction
temperature ELECTRICAL CHARACTERISTICS
Off-CharacteristicsParameterSymbolTests
ConditionsMinTypeMaxUnit-Drain-Source Breakdown
VoltageBVDSSID=250μA, VGS=0V600--VBreakdown Voltage
Temperature Coefficient△BVDSS/△TJID=250μA, referenced
to 25ºC-0.7-V/ºC Zero Gate Voltage Drain
CurrentIDSSVDS=600V,VGS=0V, TC=25ºC--1μAVDS=480V,
TC=125ºC--10Gate-body leakage current, forwardIGSSFVDS=0V,
VGS =30V--100nAGate-body leakage
current, reverseIGSSRVDS=0V,
VGS = -30V---100nA
On-CharacteristicsParameterSymbolTests
ConditionsMinTypeMaxUnitGate Threshold VoltageVGS(th)VDS =
VGS , ID=250μA2.0-4.0VStatic
Drain-Source On-ResistanceRDS(ON)VGS =10V ,
ID=2.0A-2.02.5ΩForward TransconductancegfsVDS = 40V, ID=2.0A
(note4)-4.0-S Dynamic
CharacteristicsParameterSymbolTests ConditionsMinTypeMaxUnitInput
capacitanceCissVDS=25V, VGS =0V, f=1.0MHZ-510660pFOutput
capacitanceCoss-5470pFReverse transfer capacitanceCrss-810pF
Switching CharacteristicsParameterSymbolTests
ConditionsMinTypeMaxUnitTurn-On delay
timetd(on)VDD=300V, ID=4A, RG=25Ω(note 4,5)-1642nsTurn-On
rise timetr-48112nsTurn-Off delay timetd(off)-48105nsTurn-Off Fall
timetf-3886nsTotal Gate ChargeQgVDS =480V , ID=4A,
VGS =10V (note 4,5)-1520nC-Gate-Source
chargeQgs-2.8-nC-Gate-Drain chargeQgd-6.8-nC -
Drain-Source Diode Characteristics and Maximum
RatingsParameterSymbolTests ConditionsMinTypeMaxUnitMaximum
Continuous Drain-Source Diode Forward CurrentIS--4AMaximum Pulsed
Drain-Source Diode Forward CurrentISM--16ADrain-Source Diode
Forward VoltageVSDVGS=0V, IS=4A--1.4VReverse recovery
timetrrVGS=0V, IS=4AdIF/dt=100A/μs (note 4)-320-nsReverse recovery
chargeQrr-2.4-μC :1:2:L=25mH, IAS=4A, VDD=50V, RG=25 Ω,
TJ=25ºC3:ISD ≤4A, di/dt ≤300A/μs, VDD≤BVDSS,
TJ=25ºC4::≤300μs,≤2%5:Notes:1:Pulse width limited by maximum
junction temperature2:L=25mH, IAS=4A, VDD=50V, RG=25Ω, Starting
TJ=25ºC3:ISD ≤4A, di/dt ≤300A/μs, VDD≤BVDSS, Starting
TJ=25ºC4:Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%5:Essentially
independent of operating temperature
ELECTRICAL CHARACTERISTICS (curves)
1.
2.
Fig. 1 On-State
Characteristics Fig.
2 Transfer
Characteristics 3.
4.
Fig. 3 Breakdown Voltage Variation vs
Temperature Fig.
4 On-Resistance Variation vs
Temperature 5.
6.
Fig. 5 Capacitance Characteristics
Fig.
6 Gate Charge
Characteristics 7.
8.
Fig. 7 Maximum Safe Operating Area
Fig. 8 Maximum
Drain Current vs Case Temperature9. (TO-251/TO-252) Fig. 9
Transient Thermal Response Curve
(TO-251/TO-252) 10.
(TO-220/TO-262)Fig. 10 Transient Thermal Response
Curve(TO-220/TO-262)11. (TO-220F)Fig. 11 Transient
Thermal Response Curve(TO-220F) TEST CIRCUITS AND
WAVEFORMS 12.
Fig.12 Resistive Switching Test Circuit & Waveforms13.
Fig.13 Gate Charge Test Circuit & Waveform14.
Fig.14 Unclamped Inductive Switching Test Circuit &
Waveforms TPACKAGE MECHANICAL DATA
TO-251
DIMMILLIMETERSDIMMILLIMETERS A2.2±0.5H1.8±0.5 B5.2±0.25I0.8±0.05 C5.3±0.25J0.508±0.015 D4.5±0.5K2.3±0.25 E6.3±0.25L0.5±0.1 F2.3±0.05M0.508±0.015 G0.6±0.05N7.5±0.5 TO-252
DIMMILLIMETERSDIMMILLIMETERSA2.2±0.5
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