4n60 Mosfet Original Quality Transistors To220/220f/252/263

 ZG4N60N,,,,,.,,.ZG4N60 is an N-channel enhancement mode MOSFET, which is produced usingZhongxinMicro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.  MAIN CHARACTERISTICS       VDSS600V ID4.0ARDS(ON)2.0ΩCrss8pF   ABSOLUTE MAXIMUM RATINGS (Tc=25ºC)                      ParameterSymbolValueUnit-Drain-Source VoltageVDSS600VContinues Drain CurrentIDTc=25ºC4*ATc=100ºC2.5*( 1)Plused Drain Current (note 1)IDM16AGate-to-Source VoltageVGS±30V( 2)Single Pulsed Avalanche Energy (note 2)EAS218mJ( 1)Avalanche Current (note 1)IAR4.0A( 1)Repetitive Avalanche Energy (note 1)EAR10mJ( 3)Peak Diode Recovery (note 3)dv/dt4.5V/nsPower DissipationPDTc=25ºCTO-251/TO-25251WTO-220/TO-262100TO-220F33Power Dissipation Derating FactorPD(DF)Above 25ºCTO-251/TO-2520.39W/ºCTO-220/TO-2620.8TO-220F0.26 Operating and Storage Temperature RangeTJ,TSTG150,-55~+150ºCMaximum Temperature for SolderingTL300ºC  THERMAL CHARACTERIASTIC                                                         ParameterSymbolMaxUnitThermal Resistance,Junction to CaseRth(j-c)TO-251/TO-2522.5WTO-220/TO-2621.25TO-220F3.79Thermal Resistance,Junction to AmbientRth(j-A)TO-251/TO-25283W/ºCTO-220/TO-26262.5TO-220F62.5* * Drain current limited by maximum junction temperature   ELECTRICAL CHARACTERISTICS                                                         Off-CharacteristicsParameterSymbolTests ConditionsMinTypeMaxUnit-Drain-Source Breakdown VoltageBVDSSID=250μA, VGS=0V600--VBreakdown Voltage Temperature Coefficient△BVDSS/△TJID=250μA, referenced to 25ºC-0.7-V/ºC Zero Gate Voltage Drain CurrentIDSSVDS=600V,VGS=0V, TC=25ºC--1μAVDS=480V, TC=125ºC--10Gate-body leakage current, forwardIGSSFVDS=0V, VGS =30V--100nAGate-body leakage current, reverseIGSSRVDS=0V, VGS = -30V---100nA    On-CharacteristicsParameterSymbolTests ConditionsMinTypeMaxUnitGate Threshold VoltageVGS(th)VDS = VGS , ID=250μA2.0-4.0VStatic Drain-Source On-ResistanceRDS(ON)VGS =10V , ID=2.0A-2.02.5ΩForward TransconductancegfsVDS = 40V, ID=2.0A (note4)-4.0-S    Dynamic CharacteristicsParameterSymbolTests ConditionsMinTypeMaxUnitInput capacitanceCissVDS=25V, VGS =0V, f=1.0MHZ-510660pFOutput capacitanceCoss-5470pFReverse transfer capacitanceCrss-810pF    Switching CharacteristicsParameterSymbolTests ConditionsMinTypeMaxUnitTurn-On delay timetd(on)VDD=300V, ID=4A, RG=25Ω(note 4,5)-1642nsTurn-On rise timetr-48112nsTurn-Off delay timetd(off)-48105nsTurn-Off Fall timetf-3886nsTotal Gate ChargeQgVDS =480V , ID=4A, VGS =10V (note 4,5)-1520nC-Gate-Source chargeQgs-2.8-nC-Gate-Drain chargeQgd-6.8-nC  -    Drain-Source Diode Characteristics and Maximum RatingsParameterSymbolTests ConditionsMinTypeMaxUnitMaximum Continuous Drain-Source Diode Forward CurrentIS--4AMaximum Pulsed Drain-Source Diode Forward CurrentISM--16ADrain-Source Diode Forward VoltageVSDVGS=0V, IS=4A--1.4VReverse recovery timetrrVGS=0V, IS=4AdIF/dt=100A/μs (note 4)-320-nsReverse recovery chargeQrr-2.4-μC  :1:2:L=25mH, IAS=4A, VDD=50V, RG=25 Ω, TJ=25ºC3:ISD ≤4A, di/dt ≤300A/μs, VDD≤BVDSS, TJ=25ºC4::≤300μs,≤2%5:Notes:1:Pulse width limited by maximum junction temperature2:L=25mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25ºC3:ISD ≤4A, di/dt ≤300A/μs, VDD≤BVDSS, Starting TJ=25ºC4:Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%5:Essentially independent of operating temperature     ELECTRICAL CHARACTERISTICS (curves)                                  1.                                    2. Fig. 1 On-State Characteristics                                                          Fig. 2 Transfer Characteristics             3.                        4. Fig. 3 Breakdown Voltage Variation vs Temperature         Fig. 4 On-Resistance Variation vs Temperature                       5.                                                         6. Fig. 5 Capacitance Characteristics                                       Fig. 6 Gate Charge Characteristics         7.                                   8. Fig. 7 Maximum Safe Operating Area         Fig. 8 Maximum Drain Current vs Case Temperature9.  (TO-251/TO-252) Fig. 9 Transient Thermal Response Curve (TO-251/TO-252)      10.  (TO-220/TO-262)Fig. 10 Transient Thermal Response Curve(TO-220/TO-262)11.  (TO-220F)Fig. 11 Transient Thermal Response Curve(TO-220F)   TEST CIRCUITS AND WAVEFORMS                                         12.  Fig.12 Resistive Switching Test Circuit & Waveforms13.  Fig.13 Gate Charge Test Circuit & Waveform14.  Fig.14 Unclamped Inductive Switching Test Circuit & Waveforms  TPACKAGE MECHANICAL DATA                                             TO-251 DIMMILLIMETERSDIMMILLIMETERS    A2.2±0.5H1.8±0.5    B5.2±0.25I0.8±0.05    C5.3±0.25J0.508±0.015    D4.5±0.5K2.3±0.25    E6.3±0.25L0.5±0.1    F2.3±0.05M0.508±0.015    G0.6±0.05N7.5±0.5    TO-252 DIMMILLIMETERSDIMMILLIMETERSA2.2±0.5